| PART |
Description |
Maker |
| GR24H-2001S GR24H-1003T GR24H-4003T GR24H-5001S GR |
NEUTRAL GROUNDING RESISTORS LOAD BANKS
|
List of Unclassifed Man...
|
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| NCP45524 |
Advanced Load Management Controlled Load Switch with Low RON
|
ON Semiconductor
|
| ISL6622A ISL6610 ISL6610A ISL6612 ISL6612A ISL6614 |
VR11.1, 4-Phase PWM Controller with Light Load Efficiency Enhancement and Load Current Monitoring
|
Intersil Corporation
|
| ISL6334AIRZR5368 ISL6334ACRZR5368 ISL6334AR5368 |
VR11.1, 4-Phase PWM Controller with Light Load Efficiency Enhancement and Load Current Monitoring Features
|
Intersil Corporation
|
| AQY221R2SX AQY221R2SZ |
PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA.
|
Matsushita Electric Works(Nais)
|
| KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S80 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AQY221N1SX AQY221N1SZ |
PhotoMOS relay, RF (radio frequency). C x R 20 type. AC/DC type. Output rating: load voltage 40 V, load current 120 mA.
|
Matsushita Electric Works(Nais)
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
| HY57V281620HCT-6 HY57V281620HCT-7 HY57V281620HCT-K |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
| NCP45560 |
NCP45560 Datasheet - ecoSWITCH™ Advanced Load Management: 23A Integrated Load Switch w/ Ultra-Low R<sub>ON</sub>, V<sub>IN</sub> Range= 0.5V-13.5V, Power Good Out, Adj. Slew Rate, Adj. Discharge, & Fault Protection
|
ON Semiconductor
|
